Chung-Fu Lin, Jen-Chieh Ou, Meng-Hsueh Wang, Y. Ou, Ming-Hsin Ku
{"title":"Single-instruction based programmable memory BIST for testing embedded DRAM","authors":"Chung-Fu Lin, Jen-Chieh Ou, Meng-Hsueh Wang, Y. Ou, Ming-Hsin Ku","doi":"10.1109/VDAT.2009.5158152","DOIUrl":null,"url":null,"abstract":"With the increasing functionalities in modern SoC design, the need for dense embedded memory is growing. The test issue for this high density embedded DRAM (eDRAM) macro in a complex integration environment is becoming an important issue. In this work, we propose a single-instruction based programmable memory BIST for testing an eDRAM macro. Based on our BIST design, the supported memory testing algorithms are classified into five groups. Moreover, a compact instruction is proposed to encode the operation of each group and a two-level address generator is adopted to produce all the required addressing indexes. The proposed architecture provides a better design tradeoff in terms of the area overhead and the programmability compared with the existing work.","PeriodicalId":246670,"journal":{"name":"2009 International Symposium on VLSI Design, Automation and Test","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Symposium on VLSI Design, Automation and Test","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VDAT.2009.5158152","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
With the increasing functionalities in modern SoC design, the need for dense embedded memory is growing. The test issue for this high density embedded DRAM (eDRAM) macro in a complex integration environment is becoming an important issue. In this work, we propose a single-instruction based programmable memory BIST for testing an eDRAM macro. Based on our BIST design, the supported memory testing algorithms are classified into five groups. Moreover, a compact instruction is proposed to encode the operation of each group and a two-level address generator is adopted to produce all the required addressing indexes. The proposed architecture provides a better design tradeoff in terms of the area overhead and the programmability compared with the existing work.