P. Palestri, M. Pavesi, P. Rigolli, L. Selmi, A. Dalla Serra, A. Abramo, F. Widdershoven, E. Sangiorgi
{"title":"Impact ionization and photon emission in MOS capacitors and FETs","authors":"P. Palestri, M. Pavesi, P. Rigolli, L. Selmi, A. Dalla Serra, A. Abramo, F. Widdershoven, E. Sangiorgi","doi":"10.1109/IEDM.2000.904267","DOIUrl":null,"url":null,"abstract":"This paper addresses the problem of the origin of majority and minority carriers' substrate currents in MOS devices. In particular, we present a critical analysis of published and original tunneling experiments by means of a novel, physically based model of impact ionization and hot carrier photon emission and re-absorption in the substrate. The model explains some relevant features of substrate minority carrier currents in saturated nMOSFETs, and provides a better understanding of the origin of substrate currents in tunneling MOS capacitors.","PeriodicalId":276800,"journal":{"name":"International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2000.904267","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
This paper addresses the problem of the origin of majority and minority carriers' substrate currents in MOS devices. In particular, we present a critical analysis of published and original tunneling experiments by means of a novel, physically based model of impact ionization and hot carrier photon emission and re-absorption in the substrate. The model explains some relevant features of substrate minority carrier currents in saturated nMOSFETs, and provides a better understanding of the origin of substrate currents in tunneling MOS capacitors.
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