Origin of local temperature variation during spike anneal and millisecond anneal

R. Beneyton, A. Colin, H. Bono, F. Cacho, M. Bidaud, B. Dumont, P. Morin, K. Barla
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引用次数: 3

Abstract

Local thermal variation occurring during light enhanced rapid thermal process (RTP) and millisecond anneals called “pattern effects” have various origin, with more or less impact as function of the used process. The main issues concern the variation of thermal conductivity and the variation of the light absorption by optical interference or diffraction effects. In this paper, a large panel of experiments is described in order to put in evidence the various root causes previously mentioned and their magnitudes are also determined as function of the used process. Experiments were done on full sheet wafer for all phenomena regarding stacked layers and specific patterned structure or full flow wafer are used to evaluate the impact of pattern on temperature variation. Theoretical computation by finite element methodology (FEM) allows a comparison with the experimental results. Thanks to all our results some ways for intradie dispersion reduction will be considered.
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尖峰退火和毫秒退火时局部温度变化的原因
在光增强快速热过程(RTP)和毫秒退火过程中发生的局部热变化称为“模式效应”,其原因多种多样,其影响或多或少取决于所使用的工艺。主要问题是热导率的变化和光干涉或衍射效应引起的光吸收的变化。在本文中,为了证明前面提到的各种根本原因,描述了一个大的实验小组,它们的大小也被确定为使用过程的函数。在整片硅片上进行了实验,研究了叠层的所有现象,并采用特定的图案化结构或全流硅片来评估图案化结构对温度变化的影响。采用有限元方法进行理论计算,可与实验结果进行比较。由于我们所有的结果,我们将考虑一些减少晶片内色散的方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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