A case study of process-variation effect to SoC analog circuits

Mohd Azman Abdul Latif, N. B. Z. Zain Ali, F. Hussin
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引用次数: 3

Abstract

Recent submicron process technology scaling leads the urgency to build an efficient methodology of characterizing and modeling the process variation effect, for example, the threshold voltage, Vt. This is one of the key process parameters that must be extensively modeled and validated for accurate circuit performance. Furthermore, this requirement is even much more critical for analog applications which demand an ability to match devices precisely. Analog circuits use larger device dimensions as compared to digital circuits in order to minimize the process variation implication. This has led Negative Bias Temperature Instability (NBTI) to be the most performance limiter compared to the rest of reliability mechanisms. This reliability sensitivity is even more challenging as most of the circuit blocks (digital and analog) are fabricated on the same chip for system-on-chip (SoC) applications. This paper will describe in detail the actions taken to minimize impact to customers and will show how important proper aging simulations to be conducted with the right combination of process, voltage, temperature (PVT) and coupling/timing to occur due to process variation effect beyond specifications on analog differential amplifier (diffamp) circuits in SoC products.
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工艺变化对SoC模拟电路影响的实例研究
最近的亚微米工艺技术缩放导致迫切需要建立表征和建模工艺变化效应的有效方法,例如,阈值电压Vt。这是必须广泛建模和验证精确电路性能的关键工艺参数之一。此外,对于需要精确匹配设备的模拟应用来说,这一要求甚至更为关键。与数字电路相比,模拟电路使用更大的器件尺寸,以尽量减少工艺变化的影响。与其他可靠性机制相比,负偏置温度不稳定性(NBTI)是最大的性能限制因素。这种可靠性灵敏度更具挑战性,因为大多数电路块(数字和模拟)都是在同一芯片上制造的,用于片上系统(SoC)应用。本文将详细描述为尽量减少对客户的影响而采取的措施,并将展示由于SoC产品中模拟差分放大器(diffamp)电路的工艺变化影响超出规格,因此通过工艺、电压、温度(PVT)和耦合/定时的正确组合进行适当老化模拟的重要性。
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