A comparison in THD values of conventional 3-phase VSI with different conduction angles of thyristors

Pankaj Kumar, A. Dahiya
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Abstract

Multi-level (ML) converters, now a day's seems to be one of the finest solutions for the DC-to-AC power conversion in the high power high-voltage applications like HVDC transmission system as well as in medium power medium-voltage applications such as renewable energy system. ML converters uses at least three or more voltage levels (steps) in order to modulate the output ac voltage, which leads to the reduction in the voltage distortion in the power system. For the medium power applications, we have the topologies like cascaded H-Bridge, diode-clamped, flying-capacitor type etc., but in the high power applications, all of these suffers from a common problem of high switching losses, requires devices with high switching capability like MOSFETs, IGBTs, GTOs. In this paper two simulink models of the conventional VSI with their firing circuits are presented and a comparison of the conventional VSI (with a single DC energy source) for the different possible conduction angles of the thyristors is done with the help of FFT tool in MATLAB. Finally the optimization of the thyristors conduction angle for the least possible THD value is proposed by the tabulation method and it is verified that for a conventional VSI, the THD value can also be reduced by varying conduction angle of thyristors to a particular value.
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不同晶闸管导通角下常规三相VSI的THD值比较
多电平(ML)转换器,现在似乎是一个最好的解决方案,直流到交流的大功率高压应用,如高压直流输电系统,以及中功率中压应用,如可再生能源系统。ML转换器使用至少三个或更多电压电平(步骤)来调制输出交流电压,从而减少电力系统中的电压失真。对于中功率应用,我们有级联h桥,二极管箝位,飞电容型等拓扑结构,但在高功率应用中,所有这些都存在高开关损耗的共同问题,需要具有高开关能力的器件,如mosfet, igbt, gto。本文给出了两种传统VSI及其发射电路的仿真模型,并利用MATLAB中的FFT工具对传统VSI(单直流电源)在不同导通角下的可控硅进行了比较。最后,利用制表法提出了以最小THD值为目标的晶闸管导通角优化方法,并验证了对于传统的VSI,通过改变晶闸管导通角到特定值也可以降低THD值。
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