I. Omura, T. Demon, Toshiyuki Miyanagi, T. Ogura, H. Ohashi
{"title":"IEGT design concept against operation instability and its impact to application","authors":"I. Omura, T. Demon, Toshiyuki Miyanagi, T. Ogura, H. Ohashi","doi":"10.1109/ISPSD.2000.856765","DOIUrl":null,"url":null,"abstract":"IEGT's (Injection Enhanced Gate transistors) and HV-IGBT's are inherently unstable inducing harmful current crowding and oscillation among paralleled chips or packages. The instability problem has become crucial in device design and application. This paper will describe the mechanism of the instability and propose effective solutions for device and package design against the problem.","PeriodicalId":260241,"journal":{"name":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2000.856765","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 20
Abstract
IEGT's (Injection Enhanced Gate transistors) and HV-IGBT's are inherently unstable inducing harmful current crowding and oscillation among paralleled chips or packages. The instability problem has become crucial in device design and application. This paper will describe the mechanism of the instability and propose effective solutions for device and package design against the problem.
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