O. Chen, Kuan-Hsien Lin, Zhe Ming Liu, Shu Chun Wang, Meng-Lin Hsia
{"title":"2D and 3D integrated image sensor with a bus-sharing mechanism","authors":"O. Chen, Kuan-Hsien Lin, Zhe Ming Liu, Shu Chun Wang, Meng-Lin Hsia","doi":"10.1109/MWSCAS.2012.6291976","DOIUrl":null,"url":null,"abstract":"This work develops a 2D/3D integrated image sensor that includes photodiodes, pixel circuits, correlated double sampling circuits, sense amplifiers, a multi-channel Time-to-Digital Converter (TDC), a column decoder, a row decoder, a controller and readout circuits. The photodiode of P-diffusion_N-well_P-substrate is used to sense photos at 2D and 3D modes under different biased voltages. At 2D and 3D modes, a charge supply mechanism and a feedback pull-down mechanism in a pixel circuit are adopted to delay the saturation and accelerate the response, respectively. As well as a multi-channel TDC, rapid parallel reading at a 3D mode is accomplished by using a bus-sharing mechanism. Based on the TSMC 0.35μm 2P4M CMOS technology, a 352×288-pixel 2D and 88×72-pixel 3D integrated image sensor was implemented to have a die size of 12mm×12mm. The dynamic range at a 2D mode can reach 110dB and the depth resolution can be around 4cm at a 3D mode. Therefore, the proposed integrated image sensor can effectively switch between 2D and 3D sensing operations for various multimedia capturing applications.","PeriodicalId":324891,"journal":{"name":"2012 IEEE 55th International Midwest Symposium on Circuits and Systems (MWSCAS)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE 55th International Midwest Symposium on Circuits and Systems (MWSCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSCAS.2012.6291976","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
This work develops a 2D/3D integrated image sensor that includes photodiodes, pixel circuits, correlated double sampling circuits, sense amplifiers, a multi-channel Time-to-Digital Converter (TDC), a column decoder, a row decoder, a controller and readout circuits. The photodiode of P-diffusion_N-well_P-substrate is used to sense photos at 2D and 3D modes under different biased voltages. At 2D and 3D modes, a charge supply mechanism and a feedback pull-down mechanism in a pixel circuit are adopted to delay the saturation and accelerate the response, respectively. As well as a multi-channel TDC, rapid parallel reading at a 3D mode is accomplished by using a bus-sharing mechanism. Based on the TSMC 0.35μm 2P4M CMOS technology, a 352×288-pixel 2D and 88×72-pixel 3D integrated image sensor was implemented to have a die size of 12mm×12mm. The dynamic range at a 2D mode can reach 110dB and the depth resolution can be around 4cm at a 3D mode. Therefore, the proposed integrated image sensor can effectively switch between 2D and 3D sensing operations for various multimedia capturing applications.