2D and 3D integrated image sensor with a bus-sharing mechanism

O. Chen, Kuan-Hsien Lin, Zhe Ming Liu, Shu Chun Wang, Meng-Lin Hsia
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引用次数: 2

Abstract

This work develops a 2D/3D integrated image sensor that includes photodiodes, pixel circuits, correlated double sampling circuits, sense amplifiers, a multi-channel Time-to-Digital Converter (TDC), a column decoder, a row decoder, a controller and readout circuits. The photodiode of P-diffusion_N-well_P-substrate is used to sense photos at 2D and 3D modes under different biased voltages. At 2D and 3D modes, a charge supply mechanism and a feedback pull-down mechanism in a pixel circuit are adopted to delay the saturation and accelerate the response, respectively. As well as a multi-channel TDC, rapid parallel reading at a 3D mode is accomplished by using a bus-sharing mechanism. Based on the TSMC 0.35μm 2P4M CMOS technology, a 352×288-pixel 2D and 88×72-pixel 3D integrated image sensor was implemented to have a die size of 12mm×12mm. The dynamic range at a 2D mode can reach 110dB and the depth resolution can be around 4cm at a 3D mode. Therefore, the proposed integrated image sensor can effectively switch between 2D and 3D sensing operations for various multimedia capturing applications.
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具有总线共享机制的二维和三维集成图像传感器
这项工作开发了一个2D/3D集成图像传感器,包括光电二极管、像素电路、相关双采样电路、感测放大器、多通道时间到数字转换器(TDC)、列解码器、行解码器、控制器和读出电路。利用p -diffusion - n - well_p衬底的光电二极管,在不同的偏置电压下对二维和三维模式下的照片进行感测。在二维和三维模式下,采用电荷供应机制和像素电路中的反馈下拉机制分别延迟饱和和加速响应。除了多通道TDC外,还通过使用总线共享机制实现了3D模式下的快速并行读取。基于台积电0.35μm 2P4M CMOS技术,实现了芯片尺寸为12mm×12mm的352×288-pixel 2D和88×72-pixel 3D集成图像传感器。2D模式下动态范围可达110dB, 3D模式下深度分辨率可达4cm左右。因此,所提出的集成图像传感器可以有效地在二维和三维传感操作之间切换,用于各种多媒体捕获应用。
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