Temperature change induced degradation of SiC MOSFET devices

Abstract

Besides the electric parameters of a semiconductor device, the lifetime is a key measure of quality. Overheating is one of the top failure causes in electronic systems. In this paper, a power cycling experiment done on silicon carbide (SiC) MOSFET devices is presented. The experimental setup and measurement conditions are described in detail and a discussion is given on the importance of the electrical setup and the control strategy. The data collected during the power cycling are analyzed, and the primary failure modes are identified. The high-resolution monitoring of the voltage drop on the device, in combination with other monitored parameters, enables the detection of a bond wire lift-off or breakage. With the help of the thermal transient measurement and structure function analysis, the structural changes in the heat flow path can also be identified. Finally, the results of the electric measurements are compared and verified by scanning acoustic microscopy tests.