Monte Carlo Simulation of Silicon Nanowhiskers Growth

Abstract

Examination of silicon nanowhiskers (NWs) growth on Si(111) surface activated by gold was carried out using Monte Carlo simulation. Dependence of NW length on gold drop size was obtained. It was shown that for given temperature and deposition rate there is optimal drop size corresponding to maximal whisker growth rate. Effect of surface wetting by drop material was investigated: for strong wettability whiskers grew curved and for weak - drop became too movable and could slide down from the whisker top. It was demonstrated that combination of two mechanisms of Si incorporation at Si-Au interface: diffusion through the drop bulk with following Si precipitation at interface and Si incorporation into drop perimeter due surface diffusion is the most optimal for vertical Si nanowhiskers growth.