Taeyeong Huh, Farhan Hussain, Sanghyuk Jung, Y. Song
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引用次数: 0
Abstract
NAND flash memory has cost competitiveness, since the process technology which can store multi-bit in a cell is developed. Because of this technology, NAND flash memory is widely used for storage system of various electronic devices. Even though the capacity per unit area is consistently increased with the development of process technology, the cell-to-cell interference rises accordingly and it makes the possibility of bad block increase rapidly. In this paper, we analyzed the pattern of bad page by using the platform board, and we propose the lifetime enhancement scheme of flash storage system based on the experimental results.
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