Radiation damage studies of optoelectronic components for the CMS tracker optical links

K. Gill, V. Arbet-Engels, J. Batten, G. Cervelli, R. Grabit, C. Mommaert, G. Stefanini, J. Troska, F. Vasey
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引用次数: 35

Abstract

Optical links are being developed to transfer analogue tracking data and digital timing and control signals in the future Compact Muon Solenoid (CMS) experiment at CERN. The radiation environment inside the CMS tracker will be extreme, with hadron fluences up to /spl sim/10/sup 14//cm/sup 2/ and ionising doses of /spl sim/100 kGy over the experimental lifetime. Prototype link elements, consisting of commercially available 1310 nm multi-quantum-well InGaAsP lasers and InGaAs p-i-n photodiodes, have been irradiated in a fully packaged form with /spl sim/6 MeV neutrons to 10/sup 15/ n/cm/sup 2/, 24 GeV protons to 4/spl times/10/sup 14/ p/cm/sup 2/ and /sup 60/Co-gammas to 100 kGy. Three types of single-mode optical fiber, two pure-silica core and one Ge-doped core, were irradiated in several stages with /sup 60/Co-gammas to a total dose of /spl sim/90 kGy. Neutron and proton damage induced large increases in laser threshold and significant decreases in light output efficiency. P-i-n leakage current increased by up to 6-7 orders of magnitude for neutron and proton damage. P-i-n response was relatively unaffected until /spl sim/2/spl times/10/sup 14/ n/cm/sup 2/, or /spl sim/4/spl times/10/sup 13/ p/cm, after which the photocurrent decreased rapidly. Gamma damage after 100 kGy was minor in comparison to hadron damage in both the lasers and p-i-n photodiodes. The radiation induced attenuation at 1300 nm in the optical fibers was dependent upon the fiber type, with losses of 0.08 dB/m for the pure-silica core fiber and 0.12 dB/m in the Ge-doped core fiber, after /spl sim/90 kGy. The annealing in one of the pure-silica core fibers was found to be temporary in nature.
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CMS跟踪器光链路光电元件辐射损伤研究
在欧洲核子研究中心未来的紧凑型介子螺线管(CMS)实验中,正在开发用于传输模拟跟踪数据和数字定时和控制信号的光学链路。CMS跟踪器内部的辐射环境将是极端的,强子影响高达/spl sim/10/sup / 14//cm/sup 2/,在实验寿命期间电离剂量为/spl sim/100 kGy。原型链接元件,由商用1310 nm多量子阱InGaAsP激光器和InGaAs p-i-n光电二极管组成,已以完全封装的形式照射/spl sim/6 MeV中子至10/sup 15/ n/cm/sup 2/, 24 GeV质子至4/spl次/10/sup 14/ p/cm/sup 2/和/sup 60/ co - γ至100 kGy。三种类型的单模光纤,两个纯硅芯和一个掺锗芯,以/sup 60/ co - γ分几个阶段照射,总剂量为/spl sim/90 kGy。中子和质子损伤导致激光阈值大幅增加,光输出效率显著降低。对于中子和质子损伤,P-i-n泄漏电流增加了6-7个数量级。在/spl sim/2/spl times/10/sup 14/ n/cm/sup 2/或/spl sim/4/spl times/10/sup 13/ p/cm之前,p -i-n响应相对不受影响,之后光电流迅速下降。与激光和p-i-n光电二极管中的强子损伤相比,100 kGy后的伽马损伤较小。光纤1300 nm处的辐射诱导衰减与光纤类型有关,在/spl sim/90 kGy后,纯硅芯光纤的损耗为0.08 dB/m,掺锗芯光纤的损耗为0.12 dB/m。发现其中一根纯硅芯纤维的退火性质是暂时的。
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