J. Franco, B. Kaczer, M. Toledano-Luque, P. Roussel, G. Groeseneken, B. Schwarz, M. Bina, M. Waltl, P. Wagner, T. Grasser
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引用次数: 24
Abstract
We study the impact of individual charged gate oxide defects on the characteristics of nanoscaled pMOSFETs for varying body biases. Both a reduced time-zero variability and a reduced time-dependent variability are observed when a forward body bias is applied. In order to explain these observations, a model based on the modulation of the number of unscreened dopant atoms within the channel depletion region is proposed.
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