F. Moradi, D. Wisland, H. Mahmoodi, Y. Berg, T. Cao
{"title":"New SRAM design using body bias technique for ultra low power applications","authors":"F. Moradi, D. Wisland, H. Mahmoodi, Y. Berg, T. Cao","doi":"10.1109/ISQED.2010.5450536","DOIUrl":null,"url":null,"abstract":"A new SRAM design is proposed. Body biasing improves the static noise margin (SNM) improved by at least 15% compared to the standard cells. Through using this technique, lowering supply voltage is possible. This SRAM cell is working under 0.3V supply voltage offering a SNM improvement of 22% for the read cycle. Write Margin is not affected due to using body biasing technique. 65nm ST models are used for simulations.","PeriodicalId":369046,"journal":{"name":"2010 11th International Symposium on Quality Electronic Design (ISQED)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 11th International Symposium on Quality Electronic Design (ISQED)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISQED.2010.5450536","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 20
Abstract
A new SRAM design is proposed. Body biasing improves the static noise margin (SNM) improved by at least 15% compared to the standard cells. Through using this technique, lowering supply voltage is possible. This SRAM cell is working under 0.3V supply voltage offering a SNM improvement of 22% for the read cycle. Write Margin is not affected due to using body biasing technique. 65nm ST models are used for simulations.
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