FET modeling for analog and digital applications

Abstract

We consider some recent developments in the modeling of submicrometer field effect transistor devices for use in design of analog and mixed mode applications. We emphasize the use of unified models with a precise and continuous description of the I-V and C-V characteristics in all regimes of operation, including the transition regions. The models incorporate short-channel and high-field effects, gate leakage current, and temperature dependencies of device parameters.