Davide Brandano, M. Delgado-Restituto, J. Ruiz-Amaya, Á. Rodríguez-Vázquez
{"title":"A 5.3mW, 2.4GHz ESD protected Low-Noise Amplifier in a 0.13μm RFCMOS technology","authors":"Davide Brandano, M. Delgado-Restituto, J. Ruiz-Amaya, Á. Rodríguez-Vázquez","doi":"10.1109/ECCTD.2007.4529539","DOIUrl":null,"url":null,"abstract":"An Electrostatic Discharge (ESD) protected Low- Noise Amplifier (LNA) for the 2.4 GHz ISM band designed in a 0.13 mum standard RFCMOS technology is presented. The amplifier, including packaging effects, achieves 16.8 dB power gain, reflexion coefficients S11, S22 < -30 dB over the 2.4 GHz ISM band, a peak noise figure of 1.8 dB, and an IIP3 of 1 dBm, while drawing less than 4.5 mA dc biasing current from the 1.2 V power supply. Further, the LNA withstands a Human Body Model (HBM) ESD stress up to plusmn2.0 kV, by means of the additional custom protection circuitry.","PeriodicalId":445822,"journal":{"name":"2007 18th European Conference on Circuit Theory and Design","volume":"61 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 18th European Conference on Circuit Theory and Design","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECCTD.2007.4529539","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
An Electrostatic Discharge (ESD) protected Low- Noise Amplifier (LNA) for the 2.4 GHz ISM band designed in a 0.13 mum standard RFCMOS technology is presented. The amplifier, including packaging effects, achieves 16.8 dB power gain, reflexion coefficients S11, S22 < -30 dB over the 2.4 GHz ISM band, a peak noise figure of 1.8 dB, and an IIP3 of 1 dBm, while drawing less than 4.5 mA dc biasing current from the 1.2 V power supply. Further, the LNA withstands a Human Body Model (HBM) ESD stress up to plusmn2.0 kV, by means of the additional custom protection circuitry.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
