X-band GaAs mHEMT LNAs with 0.5 dB noise figure

2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535) Pub Date : 2004-06-06 DOI:10.1109/MWSYM.2004.1335827

M. Heins, J. Carroll, M. Kao, J. Delaney, C. Campbell

引用次数: 16

Abstract

Two X-band LNA ICs have been demonstrated using a 0.15 /spl mu/m metamorphic GaAs HEMT technology. The amplifiers have an average noise figure of 0.5 dB and power gain greater than 31 dB from 7-10 GHz. A current-shared version had gain flatness better than 1 dB, return losses greater than 11 dB, and power consumption of 42 mW. A high linearity version has an output third-order intercept point greater than 20.5 dBm from 6-12 GHz.

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噪声系数为0.5 dB的x波段GaAs mHEMT LNAs

两个x波段LNA集成电路使用0.15 /spl μ m变质GaAs HEMT技术进行了演示。该放大器在7-10 GHz范围内的平均噪声系数为0.5 dB，功率增益大于31 dB。电流共享版本的增益平坦度优于1 dB，回波损耗大于11 dB，功耗为42 mW。高线性度版本的输出三阶截距点在6-12 GHz范围内大于20.5 dBm。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)

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