Design and Performance Evaluation of Energy Efficient 8-Bit ALU At Ultra Low Supply Voltages Using FinFET With 20nm Technology

V. Vijay, Sadulla Shaik, P. C. Shekar, P. Manoja, R. Abhinaya, M. Rachana, N. Nikhil
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引用次数: 5

Abstract

ince last few years, the tiny size of MOSFET, that is less than tens of nanometers, created some operational problems such as increased gate-oxide leakage, amplified junction leakage, high sub-threshold conduction, and reduced output resistance. To overcome the above challenges, FinFET has the advantages of an increase in the operating speed, reduced power consumption, decreased static leakage current is used to realize the majority of the applications by replacing MOSFET. By considering the attractive features of the FinFET, an ALU is designed as an application. In the digital processor, the arithmetic and logical operations are executed using the Arithmetic logic unit (ALU). In this paper, power efficient 8-bit ALU is designed with Full adder (FA) and multiplexers composed of Gate diffusion input (GDI) which gained designer's choice for digital combinational circuit realization at minimum power consumption. The design is simulated using Cadence virtuoso with 20nm technology. Comparative performance analysis is carried out in contrast to the other standard circuits by taking the critical performance metrics such as delay, power, and power delay product (PDP), energy-delay product (EDP) metrics into consideration.
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基于20nm FinFET技术的超低电源电压8位ALU设计与性能评估
近年来,由于MOSFET的尺寸很小,小于几十纳米,导致栅极氧化物泄漏增加,结漏放大,亚阈值导通高,输出电阻降低等操作问题。为了克服上述挑战,FinFET具有提高工作速度、降低功耗、减小静漏电流等优点,大部分应用是用FinFET取代MOSFET来实现的。考虑到FinFET的诱人特性,设计了一个ALU作为应用。在数字处理器中,使用算术逻辑单元(ALU)执行算术和逻辑运算。本文采用全加法器(FA)和由门扩散输入(GDI)组成的多路复用器设计了高效节能的8位ALU,为设计者在最小功耗下实现数字组合电路提供了选择。采用20nm技术的Cadence virtuoso对设计进行仿真。通过考虑延迟、功率、功率延迟积(PDP)、能量延迟积(EDP)等关键性能指标,与其他标准电路进行比较性能分析。
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