N. Kato, T. Yamada, S. Yamada, T. Nakamura, T. Hamano
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引用次数: 17
Abstract
The degradation of polysilicon thin film transistors was investigated under DC stress. There was a strong relationship between increase of threshold voltage and power consumption under stressing. The channel was found to reach high temperature by Joule heat because of poor thermal conductivity of the quartz substrate. It is shown that this temperature rise accelerates the degradation caused by gate stress.<>
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