Improvement in dielectric properties of bilayer ZnO/MgO films deposited by Sol-Gel technique

Abstract

Magnesium oxide and bilayer ZnO/MgO dielectrics film were successfully deposited using spin coating technique. The effect of MgO layer thickness towards prepared dielectric films behaviour was determined by controlling the deposition time. The comparison of the MgO and ZnO/MgO dielectrics film properties shows that the bilayer ZnO/MgO with 238nm MgO layer thickness shows better dielectrics properties compared to others. This was due to its small surface roughness which resulted in better electrical properties that have high resistivity and low leakage current. Optimized bilayer ZnO/MgO film was then used as the dielectrics film for fabrication of organic capacitor. Capacitor performance was determined via capacitance-voltage (C-V) analysis at different frequency applied and it revealed that, the capacitance value increased from 2.4pF to 10pF with addition of PVDF-TrFE organic ferroelectric layer on bilayer ZnO/MgO film caused by high polarization produced in the film.