Comparison of the Growth Si-based Crystalline Silicon Carbide (SiC) by Chemical Vapor Deposition (CVD) using Carbon Monoxide (CO) and Treated Carbon Dioxide (CO2)

A.Y.K. Lim, K. Ibrahim
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Abstract

Abstract Silicon carbide (SiC) has received special attention in recent years because of its remarkable properties. This work presents the investigation on the growth of Si-based SiC using carbon monoxide (CO) compared to the treated carbon dioxide (CO2) as reported earlier. Experiments results has revealed the existence of Si-C bond and the bond formed on silicon (Si) surface through the characterization using X-ray diffraction (XRD) and Raman spectroscopy (RS). Thickness study is carried out show that growth using carbon monoxide has a thicker layer of SiC at the same growth condition compared to treated carbon dioxide. The reflective index (RI) of the growth SiC was measured. This growth technique is promising and shows great potential of producing relatively desirable quality SiC films for electronic devices fabrication.
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用一氧化碳(CO)和处理过的二氧化碳(CO2)化学气相沉积(CVD)生长硅基晶体碳化硅(SiC)的比较
碳化硅(SiC)由于其优异的性能,近年来受到了人们的广泛关注。这项工作介绍了使用一氧化碳(CO)和之前报道的处理过的二氧化碳(CO2)来生长si基SiC的研究。通过x射线衍射(XRD)和拉曼光谱(RS)表征,实验结果表明硅(Si)表面存在Si- c键并形成键。厚度研究表明,在相同的生长条件下,用一氧化碳生长的碳化硅层比用二氧化碳处理的碳化硅层厚。测定了生长SiC的反射指数(RI)。这种生长技术是有前途的,并显示出巨大的潜力,以生产相对理想的质量SiC薄膜用于电子器件制造。
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