Farhad Abbasi Aghdam Meinagh, Vida Ranjbarizad, E. Babaei
{"title":"New Non-Isolated High Voltage Gain Single-Switch DC-DC Converter Based on Voltage-Lift Technique*","authors":"Farhad Abbasi Aghdam Meinagh, Vida Ranjbarizad, E. Babaei","doi":"10.1109/PEDSTC.2019.8697254","DOIUrl":null,"url":null,"abstract":"In this paper, a new non-isolated high gain DC-DC converter using one switch and a combination of the voltage-lift and switched-capacitor networks is proposed with wide variation range for the duty cycle. This converter has one switch and a low number of elements in its topology. Moreover, the proposed converter can achieve high conversion ratios showing the low voltage stress for its semiconductors and capacitors. In this paper, the analysis of the steady-state and related equations are given. Finally, the simulation results are given to validate the theoretical analysis.","PeriodicalId":296229,"journal":{"name":"2019 10th International Power Electronics, Drive Systems and Technologies Conference (PEDSTC)","volume":"73 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 10th International Power Electronics, Drive Systems and Technologies Conference (PEDSTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PEDSTC.2019.8697254","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
Abstract
In this paper, a new non-isolated high gain DC-DC converter using one switch and a combination of the voltage-lift and switched-capacitor networks is proposed with wide variation range for the duty cycle. This converter has one switch and a low number of elements in its topology. Moreover, the proposed converter can achieve high conversion ratios showing the low voltage stress for its semiconductors and capacitors. In this paper, the analysis of the steady-state and related equations are given. Finally, the simulation results are given to validate the theoretical analysis.
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