{"title":"Field emission imaging study of silicon field emitters","authors":"Jiang Liu, J. Hren, C. Sune, G. W. Jones, H. Gray","doi":"10.1109/IEDM.1992.307380","DOIUrl":null,"url":null,"abstract":"The behavior of electron emission from pyramid-shaped silicon field emitters has been studied by direct imaging of electron emission as well as by emission current-voltage measurement. Oxide covered silicon emitter surfaces have resulted in structureless emission patterns. The electron emitting angle is found to vary significantly with the extraction voltage or the emission current. Experimental measurement and analysis of emission images under moderate operating conditions showed that resulted final emitting angles are under 13 degrees while initial electron emitting angles from the emitter could be as high as 18 degrees .<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 International Technical Digest on Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1992.307380","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
The behavior of electron emission from pyramid-shaped silicon field emitters has been studied by direct imaging of electron emission as well as by emission current-voltage measurement. Oxide covered silicon emitter surfaces have resulted in structureless emission patterns. The electron emitting angle is found to vary significantly with the extraction voltage or the emission current. Experimental measurement and analysis of emission images under moderate operating conditions showed that resulted final emitting angles are under 13 degrees while initial electron emitting angles from the emitter could be as high as 18 degrees .<>
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