Two-dimensional transistors based on MoS2 lateral heterostructures

Abstract

We propose two types of transistors based on lateral heterostructures of metallic and semiconducting phases of monolayer MoS2, whose top-down patterning has been recently demonstrated via electron beam irradiation [1]. The proposed transistors a MoS2 lateral heterostructure FET, and a “planar barristor”, a gate Schottky diode that is the full 2D counterpart of the graphene barristor device proposed in [2]. We evaluate their performance with ab-initio simulations using as a benchmark the CMOS technology roadmap.