Transient voltage noise in charge-recycled power delivery networks for many-layer 3D-IC

Runjie Zhang, K. Mazumdar, B. Meyer, Ke Wang, K. Skadron, M. Stan
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引用次数: 11

Abstract

Aside from the benefits it brings, 3D-IC technology inevitably exacerbates the difficulty of power delivery with volumetrically increasing power consumption. Recent work managed to “recycle” current within the 3D stack by linking the different layers' supply/ground nets into a series connection. This charge-recycled (also known as voltage-stacked, or V-S) scheme provides a scalable solution for 3D-IC's power delivery because it supports an arbitrary number of layers with a constant off-chip current demand. Although prior work has studied the circuit implementation of a V-S power delivery network (PDN) and its current-reduction benefits, a whole-system evaluation of V-S PDNs' transient voltage noise and a noise comparison between the V-S PDN and the traditional PDN are missing. In this paper, we build a system-level model to examine voltage-stacked 3D-ICs' transient noise and explore the impact of different PDN design parameters and workload behaviors. Our results show that compared with the traditional PDN scheme, V-S provides stronger isolation for cross-layer noise interference, which in turn grants higher performance benefits for run-time noise mitigation techniques, such as dynamic margin adaptation. We observe that, compared with traditional PDNs, V-S PDNs provide up to 60% lower transient noise in the worst-case scenario. Furthermore, we show that V-S PDNs significantly reduce the packaging cost, because their noise is almost insensitive to the package impedance (e.g., a 300% impedance increase only raises worst-case noise by less than 0.3% Vdd).
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多层3D-IC充电再循环输电网络中的瞬态电压噪声
除了它带来的好处之外,3D-IC技术不可避免地加剧了电力输送的困难,功耗也在不断增加。最近的工作通过将不同层的供电/接地网连接成串联连接,成功地在3D堆栈中“回收”电流。这种电荷回收(也称为电压堆叠或V-S)方案为3D-IC的电力输送提供了可扩展的解决方案,因为它支持任意数量的层,并具有恒定的片外电流需求。虽然之前的工作已经研究了V-S输电网络(PDN)的电路实现及其降电流效益,但缺乏对V-S输电网络暂态电压噪声的全系统评估以及V-S输电网络与传统PDN的噪声比较。在本文中,我们建立了一个系统级模型来检测电压堆叠3d - ic的瞬态噪声,并探讨了不同PDN设计参数和工作负载行为的影响。我们的研究结果表明,与传统的PDN方案相比,V-S对跨层噪声干扰提供了更强的隔离,这反过来又为动态边界适应等运行时噪声缓解技术提供了更高的性能优势。我们观察到,与传统pdn相比,V-S pdn在最坏情况下提供高达60%的瞬态噪声。此外,我们发现V-S pdn显著降低了封装成本,因为它们的噪声几乎对封装阻抗不敏感(例如,300%的阻抗增加只会使最坏情况下的噪声增加不到0.3% Vdd)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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