A new adustable Schmitt Trigger based on Dual Control Gate-Floating Gate Transistor (DCG-FGT)

A. Marzaki, V. Bidal, R. Laffont, W. Rahajandraibe, J. Portal, R. Bouchakour
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引用次数: 7

Abstract

This paper presents a low voltage adjustable CMOS Schmitt trigger using DCG-FGT transistor. Simple circuit is introduced to provide flexibility to program the hysteretic threshold in this paper. The hysteresis can be controlled accurately at a large voltage range. The proposed Schmitt trigger has been designed using 90nm 1.2V CMOS technology and simulated using Eldo with PSP device models. The simulation results show rail-to-rail operation and independently adjustable switching voltages VTH- (low switching voltage) and VTH+(high switching voltage).
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基于双控栅-浮栅晶体管(DCG-FGT)的新型可调施密特触发器
本文提出了一种采用DCG-FGT晶体管的低压可调CMOS施密特触发器。本文介绍了一种简单的电路,为迟滞阈值的编程提供了灵活性。在较大的电压范围内,可以精确地控制磁滞。所提出的施密特触发器采用90nm 1.2V CMOS技术设计,并使用Eldo对PSP器件模型进行了仿真。仿真结果表明,该系统轨对轨运行,开关电压VTH-(低开关电压)和VTH+(高开关电压)可独立调节。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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