Applying Sintering and SLID Bonding for Assembly of GaN Chips Working at High Temperatures

M. Myśliwiec, R. Kisiel
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引用次数: 4

Abstract

In this paper assembly techniques of monocrystalline GaN structures to DBC: sintering and hybrid: sintering + SLID are compared. As an comparison technique shear strength measurements was applied. Study was made on as-received samples, as well as structures aged in temperature above 300 °C for 500 h. Additionally metallographic cross-section of the joints were made and inspected by means of SEM and energy dispersive x-ray spectroscopy. Sintered joints are very porous and does not meet demands for assembly after long term ageing. Hybrid: sintering + SLID joints manufactured at 280 °C are far less porous and fulfil adhesion joint requirements for monocrystalline GaN assembly with excess.
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烧结与滑动键合在高温GaN芯片组装中的应用
本文比较了单晶GaN结构的DBC烧结和杂化烧结+ slide组装技术。作为对比技术,采用了抗剪强度测量。对接收样品和300℃以上时效500 h的组织进行了研究,并对接头的金相截面进行了扫描电镜和能量色散x射线能谱分析。烧结接头多孔性强,长期老化后不能满足装配要求。混合:烧结+滑动接头在280°C下制造的多孔性要小得多,并且满足单晶GaN组装的粘合接头要求。
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