{"title":"The Wideband Balun-LNA in 130 nm SiGe Technology","authors":"K. Murasov, S. Zavyalov, A. Kosykh, Z. B. Sadykov","doi":"10.1109/FAREASTCON.2018.8602728","DOIUrl":null,"url":null,"abstract":"A circuit of balun-LNA designed in 130 nm SiGe BiCMOS technology is presented. The balun-LNA has been designed using common base (CB) and common emitter (CE) stages based on heterojunction bipolar transistor (HBT). The balun-LNA circuit are used for amplification of radio frequency (RF) input signal and creation differential output signals using for double-balanced mixer (DBM). The obtained results of modeling of balun-LNA over 0.8-18 GHz frequency band are as follow: gain is more than 14 dB; NF is better than 5.0 dB, phase error of differential output signal is no more than 27 degree; VSWR is better than 1.7; required area size is $1.73 \\times 0.73\\ \\mathbf{mm}^{2}$.","PeriodicalId":177690,"journal":{"name":"2018 International Multi-Conference on Industrial Engineering and Modern Technologies (FarEastCon)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Multi-Conference on Industrial Engineering and Modern Technologies (FarEastCon)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/FAREASTCON.2018.8602728","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A circuit of balun-LNA designed in 130 nm SiGe BiCMOS technology is presented. The balun-LNA has been designed using common base (CB) and common emitter (CE) stages based on heterojunction bipolar transistor (HBT). The balun-LNA circuit are used for amplification of radio frequency (RF) input signal and creation differential output signals using for double-balanced mixer (DBM). The obtained results of modeling of balun-LNA over 0.8-18 GHz frequency band are as follow: gain is more than 14 dB; NF is better than 5.0 dB, phase error of differential output signal is no more than 27 degree; VSWR is better than 1.7; required area size is $1.73 \times 0.73\ \mathbf{mm}^{2}$.
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