Efficient inclusive analytical model for delay estimation of multi-walled carbon nanotube interconnects

M. Gholipour, N. Masoumi
{"title":"Efficient inclusive analytical model for delay estimation of multi-walled carbon nanotube interconnects","authors":"M. Gholipour, N. Masoumi","doi":"10.1049/iet-cds.2011.0283","DOIUrl":null,"url":null,"abstract":"Multi-walled carbon nanotubes (MWCNTs) have attracted much attention as very large scale integration (VLSI) chip interconnects, because of their high-current densities and excellent thermal and mechanical properties. This study investigates different aspects of the use of MWCNTs as chip routing wires to seek modern technologies for high-performance interconnects. Mathematical analyses, and simulations were made for MWCNT and Cu at global, intermediate and local interconnect levels. The authors propose a semi-analytical delay estimation model along with an equivalent RC model for MWCNT global interconnects. The results obtained from these models show good conformance with the simulation results. The proposed compact semi-analytical model can be used to perform fast analysis of MWCNT global interconnects, including delay, buffer insertion and crosstalk. The authors exploited their model to investigate the impact of buffer insertion on MWCNT interconnect delay. The optimal number of required buffers is estimated, as it minimises the MWCNT propagation delay. Analytical and simulation results show that the MWCNT interconnects require lower number of buffers compared to Cu wires.","PeriodicalId":120076,"journal":{"name":"IET Circuits Devices Syst.","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IET Circuits Devices Syst.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1049/iet-cds.2011.0283","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14

Abstract

Multi-walled carbon nanotubes (MWCNTs) have attracted much attention as very large scale integration (VLSI) chip interconnects, because of their high-current densities and excellent thermal and mechanical properties. This study investigates different aspects of the use of MWCNTs as chip routing wires to seek modern technologies for high-performance interconnects. Mathematical analyses, and simulations were made for MWCNT and Cu at global, intermediate and local interconnect levels. The authors propose a semi-analytical delay estimation model along with an equivalent RC model for MWCNT global interconnects. The results obtained from these models show good conformance with the simulation results. The proposed compact semi-analytical model can be used to perform fast analysis of MWCNT global interconnects, including delay, buffer insertion and crosstalk. The authors exploited their model to investigate the impact of buffer insertion on MWCNT interconnect delay. The optimal number of required buffers is estimated, as it minimises the MWCNT propagation delay. Analytical and simulation results show that the MWCNT interconnects require lower number of buffers compared to Cu wires.
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多壁碳纳米管互连延迟估计的高效包容分析模型
多壁碳纳米管(MWCNTs)由于具有高电流密度和优异的热力学性能,作为超大规模集成电路(VLSI)芯片的互连材料受到了广泛的关注。本研究探讨了MWCNTs作为芯片布线的不同方面,以寻求高性能互连的现代技术。在全局、中间和局部互连水平上对MWCNT和Cu进行了数学分析和模拟。本文提出了一种MWCNT全局互连的半解析延迟估计模型和等效RC模型。模型计算结果与仿真结果吻合较好。所提出的紧凑半解析模型可用于MWCNT全局互连的快速分析,包括延迟、缓冲器插入和串扰。作者利用他们的模型来研究缓冲区插入对MWCNT互连延迟的影响。估计所需缓冲区的最佳数量,因为它最小化了MWCNT的传播延迟。分析和仿真结果表明,与铜线相比,MWCNT互连所需的缓冲器数量更少。
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