H. Yonezawa, T. Maruyama, T. Okumura, N. Nishiyama, S. Arai
{"title":"Injection Type GaInAsP/InP DFB lasers directly bonded on SOI substrate","authors":"H. Yonezawa, T. Maruyama, T. Okumura, N. Nishiyama, S. Arai","doi":"10.1109/INOW.2008.4634566","DOIUrl":null,"url":null,"abstract":"Injection type DFB lasers directly bonded on an SOI substrate were realized. A threshold current as low as 104 mA was obtained with a stripe width of 25 squarem and a cavity length of 1 mm.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 International Nano-Optoelectronics Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INOW.2008.4634566","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Injection type DFB lasers directly bonded on an SOI substrate were realized. A threshold current as low as 104 mA was obtained with a stripe width of 25 squarem and a cavity length of 1 mm.
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