High power three-level rectifier comprising SiC MOSFET & Si diode hybrid power stage

Abstract

A high efficient three-level rectifier comprising SiC & Si hybrid power stage is proposed. It enables the high voltage applications with three-level NPC topology. It presents extremely low switching loss because all the Si devices are low-speed switching. At the same time, the total device cost of this rectifier is much lower than all SiC-based rectifiers. Furthermore, this topology is easy to be configured as high power type since all the devices can use half-bridge modules. In this paper, the circuit operational analysis, simulation, and experimental results are given. A comparison is given to show the advantages of the proposed rectifier.