SiC MOSFET Switching Waveform Profiling Through Passive Networks

Sam Walder, Xibo Yuan, Q. Yan
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引用次数: 5

Abstract

The use of Wide Band Gap (WBG) devices in high performance power converters is becoming more common, and the range of techniques for managing the high speed switching transitions is broadening. In particular, there is now a greater interest in applying techniques for shaping the switching transients to improve the converter performance. This paper explores the current state of the art in waveform profiling gate drivers and their application to WBG devices to determine the optimum gate waveform profile. This profile is then analysed with the goal of creating a passive gate drive network capable of replicating the performance. A hardware prototype of this gate driver is demonstrated and experimental results from it are compared with those from a standard drive and a fully active driver. The active gate driver shows a 31% decrease in current overshoot or a 35.4% reduction in turn-on switching losses.
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无源网络SiC MOSFET开关波形分析
宽带隙(WBG)器件在高性能功率变换器中的应用正变得越来越普遍,用于管理高速开关转换的技术范围正在扩大。特别是,现在有一个更大的兴趣应用技术来塑造开关瞬态,以提高变换器的性能。本文探讨了波形分析栅极驱动器的现状及其在WBG器件中的应用,以确定最佳的栅极波形分布。然后对该配置文件进行分析,目标是创建能够复制性能的无源栅极驱动网络。演示了该栅极驱动器的硬件样机,并将其实验结果与标准驱动器和全主动驱动器的实验结果进行了比较。有源栅极驱动器显示电流超调降低31%或导通开关损耗降低35.4%。
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