Revisiting the Crystallization Model of Phase Change Memory with Ab Initio Simulations

Xuhui Chen, Lining Zhang, Xinnan Lin, M. Chan
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引用次数: 1

Abstract

The crystallization of phase change memories (PCM) is usually described by a Johnson-Mehl-Avrami(JMA) equation in a SPICE model. In this work recent ab initio molecular dynamic simulation results are used for the JMA equation benchmark. It is found that: (a) the commonly used JMA equation does not account for the incubation period at the initial stage of phase change memory crystallization, even the equation is easily implemented with a sub-circuit. (b) the JMA equation based on the Arrhenius formula cannot reflect the crystallization rate with temperature. This paper proposes a crystallization model that can reproduce the incubation period and the crystallization rate dependence on temperature, thus improves the model accuracy.
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用从头算方法重新审视相变存储器的结晶模型
相变存储器(PCM)的结晶通常用SPICE模型中的Johnson-Mehl-Avrami(JMA)方程来描述。本文将最新的从头算分子动力学模拟结果用于JMA方程基准。研究发现:(a)常用的JMA方程没有考虑相变记忆结晶初始阶段的潜伏期,即使该方程很容易用子电路实现。(b)基于Arrhenius公式的JMA方程不能反映结晶速率随温度的变化。本文提出了一种可以再现结晶潜伏期和结晶速率随温度变化的结晶模型,从而提高了模型的精度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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