{"title":"Improving Operational transconductance Amplifier (OTA) gain-bandwidth tradeoff using gate-underlap MOSFETs","authors":"A. Kranti, G. A. Armstrong","doi":"10.1109/SOCCON.2009.5398084","DOIUrl":null,"url":null,"abstract":"The present work highlights the usefulness of underlap channel design in improving gain-bandwidth trade-off in analog circuit design. It is demonstrated that high values of intrinsic voltage gain (AVO_OTA) > 55 dB and unity gain frequency (fT_OTA) ~ 57 GHz of a folded cascode Operational transconductance Amplifier (OTA) can be achieved with gate-underlap channel design in 60 nm MOSFETs. These values correspond to a 15 dB improvement in AVO_OTA and a 3 fold enhancement in fT_OTA over a conventional non-underlap design. Gate-underlap OTA preserves functionality at high temperatures (550 K) by exhibiting high values of AVO_OTA (42 dB) and fT_OTA (24 GHz). Results present new opportunities for low voltage analog circuit design with future technologies.","PeriodicalId":303505,"journal":{"name":"2009 IEEE International SOC Conference (SOCC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE International SOC Conference (SOCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOCCON.2009.5398084","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The present work highlights the usefulness of underlap channel design in improving gain-bandwidth trade-off in analog circuit design. It is demonstrated that high values of intrinsic voltage gain (AVO_OTA) > 55 dB and unity gain frequency (fT_OTA) ~ 57 GHz of a folded cascode Operational transconductance Amplifier (OTA) can be achieved with gate-underlap channel design in 60 nm MOSFETs. These values correspond to a 15 dB improvement in AVO_OTA and a 3 fold enhancement in fT_OTA over a conventional non-underlap design. Gate-underlap OTA preserves functionality at high temperatures (550 K) by exhibiting high values of AVO_OTA (42 dB) and fT_OTA (24 GHz). Results present new opportunities for low voltage analog circuit design with future technologies.
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