Hot spot removal in power electronics by means of direct liquid jet cooling

J. Jörg, S. Taraborrelli, E. Sabelberg, R. Kneer, R. D. De Doncker, W. Rohlfs
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引用次数: 8

Abstract

This study examines the potential performance of submerged single phase direct impinging jet cooling and compares this cooling concept to a state of the art pin fin cooling systems. Submerged single impinging jets and arrays of impinging jets are characterized by high heat transfer coefficients. Especially in the stagnation region, in which the jet provides fresh cooling liquid to the surface, high heat removal rates occur. Thus, impinging jet arrays are a promising approach for hot spot removal as well as for thermal uniformity in large areas. In the present cooling concept, micro jets of approximately 1 mm diameter directly impinge onto the backside of a IGBT-semiconductor. In contrast to pin fin cooling, direct jet impingement cooling dispenses with the need for any kind of thermal interface materials (TIM) or heat spreader, and thus, minimizes the thermal resistance of the heat sink. A further advantage of submerged direct impinging jet cooling is hot spot removal. Once the exact location of heat generation is determined a small impinging jet can be directed at these hot spots. For this, local heat generation of the IGBT-semiconductor is first investigated by measuring the surface temperature on the top and bottom side by IR-thermometry. To observe the local heat generation the IGBT is operated for a very short time without any heat sink. This information is used in the development and design of the cooling chamber and the jet positioning. Finally, the cooling system is analyzed and compared to other common cooling systems. Both liquid cooling concepts are experimentally investigated with respect to heat transfer, pressure drop, and pumping power. A comparison and evaluation is provided with a special focus on applications in the automotive and electro-mobility sector.
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用直接液体喷射冷却的方法去除电力电子设备中的热点
本研究考察了浸没式单相直接冲击射流冷却的潜在性能,并将这种冷却概念与最先进的针翅冷却系统进行了比较。浸没式单冲击射流和阵列式冲击射流具有高传热系数的特点。特别是在停滞区,射流向表面提供新鲜的冷却液,会产生高的热去除率。因此,碰撞射流阵列是一种很有前途的热点去除方法以及大面积的热均匀性。在目前的冷却概念中,直径约为1毫米的微射流直接撞击到igbt半导体的背面。与针鳍冷却相比,直接射流冲击冷却不需要任何类型的热界面材料(TIM)或散热器,因此,最大限度地减少了散热器的热阻。浸没式直接撞击式射流冷却的另一个优点是消除了热点。一旦确定了产生热量的确切位置,一个小的撞击射流就可以直接射向这些热点。为此,首先通过红外测温法测量顶部和底部表面温度来研究igbt半导体的局部热产生。为了观察局部热的产生,IGBT在没有任何散热器的情况下运行了很短的时间。这些信息用于冷却室和射流定位的开发和设计。最后,对该冷却系统进行了分析,并与其他常用冷却系统进行了比较。这两种液体冷却的概念,实验研究了关于传热,压降,和抽水功率。比较和评估提供了一个特别关注在汽车和电动汽车领域的应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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