G. Dang, R. Mehandru, B. Luo, F. Ren, W. Hobson, J. Lopata, M. Tayahi, S. Chu, S. Pearton, W. Chang, H. Shen
{"title":"Fabrication and characteristics of high speed implant-confined, index-guided, lateral-current, 850 nm vertical cavity surface emitting lasers","authors":"G. Dang, R. Mehandru, B. Luo, F. Ren, W. Hobson, J. Lopata, M. Tayahi, S. Chu, S. Pearton, W. Chang, H. Shen","doi":"10.1109/ICCDCS.2002.1004048","DOIUrl":null,"url":null,"abstract":"Process technology of high-speed implant-apertured, index-guide, lateral-current-injection, dielectric-mirror GaAs quantum well vertical cavity surface emitting lasers has been developed. Oxygen and helium implantation for aperture definition and extrinsic capacitance reduction, dielectric mirror formation, p- and n-ohmic contact formation, were investigated. GaAs/AlGaAs based 850 nm VCSELs with small signal modulation bandwidths up to 11.5 Gb/s and an eye diagram generated at 12 Gb/s by a pseudorandom bit sequence (PRBS) of 231-1 were achieved. The with bit-error rates were below 10-13. The threshold current is as low as 0.8 mA for 7 mm diameter current apertures and typical slope efficiencies of 0.45-0.5 mA/mW are obtained for output mirror reflectivity of 99.5%.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCDCS.2002.1004048","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 15
Abstract
Process technology of high-speed implant-apertured, index-guide, lateral-current-injection, dielectric-mirror GaAs quantum well vertical cavity surface emitting lasers has been developed. Oxygen and helium implantation for aperture definition and extrinsic capacitance reduction, dielectric mirror formation, p- and n-ohmic contact formation, were investigated. GaAs/AlGaAs based 850 nm VCSELs with small signal modulation bandwidths up to 11.5 Gb/s and an eye diagram generated at 12 Gb/s by a pseudorandom bit sequence (PRBS) of 231-1 were achieved. The with bit-error rates were below 10-13. The threshold current is as low as 0.8 mA for 7 mm diameter current apertures and typical slope efficiencies of 0.45-0.5 mA/mW are obtained for output mirror reflectivity of 99.5%.
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