The next generation of high voltage (10 kV) silicon carbide power modules

Abstract

In this work, a novel high performance 10 kV / 240 A silicon carbide (SiC) metal-oxide field-effect transistor (MOSFET) power module design is presented. The key features for this power module include reworkability, low parasitic design, low thermal resistance design, equal current sharing of high voltage power MOSFETs, and low profile and small form factor. The design tradeoffs to achieve these characteristics will be discussed. In addition, the static and dynamic electric characteristics will be presented and compared to an off-the-shelf silicon (Si) counterpart.