Aerial imaging study of the mask-induced line-width roughness of EUV lithography masks

Abstract

EUV lithography uses reflective photomasks to print features on a wafer through the formation of an aerial image. The aerial image is influenced by the mask’s substrate and pattern roughness and by photon shot noise, which collectively affect the line-width on wafer prints, with an impact on local critical dimension uniformity (LCDU). We have used SHARP, an actinic mask-imaging microscope, to study line-width roughness (LWR) in aerial images at sub-nanometer resolution. We studied the impact of photon density and the illumination partial coherence on recorded images, and found that at low coherence settings, the line-width roughness is dominated by photon noise, while at high coherence setting, the effect of speckle becomes more prominent, dominating photon noise for exposure levels of 4 photons/nm2 at threshold on the mask size.