Double-T type equivalent circuit modelling method for TSVs up to 50GHz

Xiangkun Yin, Zhangming Zhu, Yintang Yang, Qijun Lu, Xiaoxian Liu, Yang Liu
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Abstract

The three-dimensional integrated circuits (3D ICs) based on through silicon via (TSV) technology offer a solution to meet the continuously increasing demand on high-speed electronic products. In order to comprehensively evaluate the signal transmission of TSV in increasing signal frequency, accuracy equivalent circuit model is necessary. In this paper, a method of double-T type equivalent circuit modelling for TSVs is proposed and applied to coaxial TSV and ground-signal (GS)-type TSVs. Furthermore, the transmission parameters (S21) of the double-T models are evaluated by SPICE and compared with the results of 3-D full-wave electromagnetic field simulation (HFSS). The good accordance of the results up to 50GHz verifies the accuracy of the proposed method.
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50GHz以下tsv的双t型等效电路建模方法
基于硅通孔(TSV)技术的三维集成电路(3D ic)为满足高速电子产品不断增长的需求提供了解决方案。为了全面评价TSV在增加信号频率时的信号传输情况,需要建立精度等效电路模型。本文提出了一种TSV双t型等效电路建模方法,并将其应用于同轴TSV和地信号(GS)型TSV。利用SPICE计算了双t模型的传输参数S21,并与三维全波电磁场仿真(HFSS)结果进行了比较。在50GHz范围内的结果吻合良好,验证了所提方法的准确性。
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