A simulation of 3-axis magnetotransistor based on the carrier recombination — Deflection effect

Abstract

This article presents 3 axis magnetotransistor based on the carrier recombination and deflection effect for detecting the magnetic field in B_X, B_Y and B_Z direction. The structure composes of four magnetotransistors along with x-axis and y-axis that has a common emitter while all collectors and bases are independent. The output is in the form of difference current of collector and base ΔI_CB. For vertical field detection, the magnetotransistor uses the carrier deflection of the deviation collector current and recombination base current as ΔI_CB. For lateral field detection B_X and B_Y it uses a pair of transistors that emitter biased current perpendicular to magnetic field. The output response is the difference current between collector of one and the base current of the another of a pair transistors as ΔI_C(1)B(3) and ΔI_C(2)B(4) for B_X and B_y, respectively. The sensitivity at I_E 5 mA, 0-1 T of B_X, B_Y and B_Z direction are -0.0248 mA/T, -0.0248 mA/T and 0.0092 mA/T, respectively by TCAD Sentaurus simulation.