B. G. Vasallo, N. Wichmann, S. Bollaert, A. Cappy, Tomas Gonzalez, D. Pardo, J. Mateos
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引用次数: 8
Abstract
The intrinsic static and dynamic performance of InAlAs/InGaAs double-gate high electron mobility transistors (DG-HEMTs) is studied by means of an ensemble 2D Monte Carlo simulator. Our model allows going deeply into the physical behavior of this novel device in comparison with similar standard HEMTs. Different gate lengths are analyzed in order to check the attenuation of short-channel effects expected in the DG-structures. The intrinsic cut-off frequency fc of the DG-HEMTs is found to be similar to that of HEMTs, but the higher values of the figures of merit gm/gd and Cgs/C gd lead to an improvement of fmax
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