Low power low phase noise 3.9GHz SiGe VCO with data modulation correction loop

M. Mostafa, S. Tuncer, G. Luff
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引用次数: 11

Abstract

A 3.9 GHz LC VCO is fabricated using a 0.35 /spl mu/m SiGe BiCMOS process. The VCO is modulated through a modulation port in transmit mode. The VCO utilizes a modulation correction loop to compensate the modulation deviation due to the variation in the tuning circuit. The VCO measured phase noise is -140 dBc at 8 MHz offset, while draining 4 mA from a 2.5 V regulated supply. A 25% tuning range was also measured.
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具有数据调制校正环路的低功耗低相位噪声3.9GHz SiGe压控振荡器
采用0.35 /spl μ m SiGe BiCMOS工艺制备了3.9 GHz LC压控振荡器。VCO在发射模式下通过调制端口进行调制。VCO利用调制校正环来补偿由于调谐电路的变化而引起的调制偏差。在8 MHz偏移时,VCO测量的相位噪声为-140 dBc,同时从2.5 V稳压电源中排出4 mA。还测量了25%的调谐范围。
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