Modeling quantum transport in semiconductor nanostructures

Abstract

There are a variety of situations in which carriers sit in small 3D quantum boxes containing a small number of electrons per box. In a sense, this range of problems takes us from unintentional quantum dots in MOSFETs (arising from the doping fluctuations) to single-electron quantum dots in semiconductor heterostructures. In between these two extremes are the realm of open quantum dots, in which the transport can be quite regular. These dots are characterized by periodic, oscillatory fluctuations in their magnetoconductance, which replicate the partial density of states in the dot itself. In this paper, we will discuss the modeling of quantum transport through open, ballistic dots through the use of the coupled Schrodinger/Poisson equation, and stabilized mode matching techniques.