S. Lee, Min-Sang Kim, E. Yoon, Sung-min Kim, Lian Jun, Dong-Won Kim, Donggun Park
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引用次数: 3
Abstract
Modifying the multi-bridge-channel MOSFET (MBCFET) process, we have successfully fabricated single-bridge-channel MOSFET (SBCFET). Due to reduced epitaxial growth steps and simple ion implantation process, the SBCFET has manufacture-worthy simple fabrication process like conventional planar transistor. The current drivability of SBCFET shows 2.0 mA/mum @ 100 pA/mum off-current in 1.0 V operation
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