{"title":"Properties of the Ga2O3 films obtained by anodization","authors":"Y. Petrova, V. Kalygina, T. Yaskevich","doi":"10.1109/SIBCON.2011.6072653","DOIUrl":null,"url":null,"abstract":"The effect of oxygen plasma and thermal annealing on electrical and dielectric properties of anodic films Ga<inf>2</inf>O<inf>3</inf> wasinvestigated.","PeriodicalId":169606,"journal":{"name":"2011 International Siberian Conference on Control and Communications (SIBCON)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 International Siberian Conference on Control and Communications (SIBCON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIBCON.2011.6072653","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The effect of oxygen plasma and thermal annealing on electrical and dielectric properties of anodic films Ga2O3 wasinvestigated.
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