{"title":"MOSFETs application for TID measurements","authors":"Yu. N. Barmakov, V. Butin, A. Butina","doi":"10.1109/SIBIRCON.2017.8109882","DOIUrl":null,"url":null,"abstract":"In this paper a new approach of p-channel MOS-transistors using for total dose monitoring at semiconductor components under radiation is presented. The calibration results enable to determine the numerical parameters for MOSFETs electro-physical model of dose effects. We propose to calculate total dose of ionization flux using the results of MOS-transistors drain current measurements by fixed gate and drain voltage.","PeriodicalId":135870,"journal":{"name":"2017 International Multi-Conference on Engineering, Computer and Information Sciences (SIBIRCON)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2017-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 International Multi-Conference on Engineering, Computer and Information Sciences (SIBIRCON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIBIRCON.2017.8109882","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In this paper a new approach of p-channel MOS-transistors using for total dose monitoring at semiconductor components under radiation is presented. The calibration results enable to determine the numerical parameters for MOSFETs electro-physical model of dose effects. We propose to calculate total dose of ionization flux using the results of MOS-transistors drain current measurements by fixed gate and drain voltage.