J. Hostetler, M. O'Grady, W. Simon, Xing Huang, M. Fox, A. Bhalla
{"title":"High current (650V–200A, 1200V–100A) single SiC diodes","authors":"J. Hostetler, M. O'Grady, W. Simon, Xing Huang, M. Fox, A. Bhalla","doi":"10.1109/WIPDA.2016.7799927","DOIUrl":null,"url":null,"abstract":"High-current, large-area single SiC JBS diodes rated at 650V-200A and 1200V-100A were fabricated on a 150mm platform that demonstrate a low VF of 1.5V. The diodes exhibit a specific differential resistance, Rdiff, sp, of 0.74 and 1.65 mΩ-cm2, respectively. The devices were tested with similarly rated Si-IGBTs and the reduction in switching losses and QRR evaluated. The high-current diodes have also been fabricated with solderable topside metals for enhanced packaging and were tested with double-sided cooling to quantify the benefits. One primary target application is for direct replacement of Si diodes in EV & HEV traction drives.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WIPDA.2016.7799927","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
High-current, large-area single SiC JBS diodes rated at 650V-200A and 1200V-100A were fabricated on a 150mm platform that demonstrate a low VF of 1.5V. The diodes exhibit a specific differential resistance, Rdiff, sp, of 0.74 and 1.65 mΩ-cm2, respectively. The devices were tested with similarly rated Si-IGBTs and the reduction in switching losses and QRR evaluated. The high-current diodes have also been fabricated with solderable topside metals for enhanced packaging and were tested with double-sided cooling to quantify the benefits. One primary target application is for direct replacement of Si diodes in EV & HEV traction drives.
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