{"title":"Picosecond Transient Reflectivity and Raman Gain Spectra of GaAs","authors":"J. Wessel, S. Beck","doi":"10.1364/lmd.1987.wa2","DOIUrl":null,"url":null,"abstract":"Recently Woodall and co-workers1 at IBM reported interesting results from a photowashing procedure applied to (100) GaAs. Unpinned behavior was observed immediately after washing. Photoluminescence yields measured from regions near the surface increased dramatically. The results suggested that the strong surface band bending ordinarily present in GaAs can be essentially eliminated by the photowashing procedure.","PeriodicalId":331014,"journal":{"name":"Topical Meeting on Lasers in Materials Diagnostics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Topical Meeting on Lasers in Materials Diagnostics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/lmd.1987.wa2","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Recently Woodall and co-workers1 at IBM reported interesting results from a photowashing procedure applied to (100) GaAs. Unpinned behavior was observed immediately after washing. Photoluminescence yields measured from regions near the surface increased dramatically. The results suggested that the strong surface band bending ordinarily present in GaAs can be essentially eliminated by the photowashing procedure.
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