H. Fujii, S. Tokumitsu, T. Mori, T. Yamashita, T. Maruyama, T. Maruyama, Y. Maruyama, Shigeki Nishimoto, Hiroyuki Arie, Shunji Kubo, T. Ipposhi
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引用次数: 10
Abstract
This paper proposes a 90nm bulk BiCDMOS platform for automotive applications. In this platform, two types of characteristic deep trench isolations are introduced. One has a top-to-bottom air-gap which serves as a stable isolator against high voltage. Another has a tungsten plug which not only minimizes area and resistance for substrate grounding but also slims down a noise-blocking active barrier guard-ring. For an Neh LD-MOSFET, a resurf-enforcing p-type region is inserted to cancel the electric field intensification brought by little thermal treatment. The advanced 90nm rule is mainly applied to a logic area for chip-size reduction. This platform also provides analog-friendly devices such as HV BJTs, full-isolation diode and eFlash.
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