G. Gorokh, V. Osinsky, D. Solovey, V. Labunov, D. Mazunov, V. Sakharuk
{"title":"Epitaxial growth of column-like nanostructures InGaN on Si in poromeric anodic alumina","authors":"G. Gorokh, V. Osinsky, D. Solovey, V. Labunov, D. Mazunov, V. Sakharuk","doi":"10.1109/CRMICO.2010.5632749","DOIUrl":null,"url":null,"abstract":"Method of formation of regular PAA without a barrier layer in the process of anodizing of Al-film on n-type Si has been developed. Semiconductor InGaN-structures were selectively grown in modified PAA-template by MO VPE. Formed self-organized nanostructures InGaN have nonpolar crystallographic α-orientation. Investigations of luminescent properties and analysis of the spectral characteristics have been performed.","PeriodicalId":237662,"journal":{"name":"2010 20th International Crimean Conference \"Microwave & Telecommunication Technology\"","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 20th International Crimean Conference \"Microwave & Telecommunication Technology\"","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CRMICO.2010.5632749","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Method of formation of regular PAA without a barrier layer in the process of anodizing of Al-film on n-type Si has been developed. Semiconductor InGaN-structures were selectively grown in modified PAA-template by MO VPE. Formed self-organized nanostructures InGaN have nonpolar crystallographic α-orientation. Investigations of luminescent properties and analysis of the spectral characteristics have been performed.
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