Thin Film Logic Circuit with Metal Capping Layered amorphous SiZnSnO thin-film transistors

Abstract

Various metal capping (MC) layer were deposited on the amorphous SiZnSnO channel layer to ensure high electrical properties. In addition, it was confirmed that the electrical characteristics change depending on the material of each MC layer. This effect is analyzed as a phenomenon which is caused by the difference between the work function of the MC layer and the work function of the channel layer. When the work function of the MC layer is smaller than the work function of the channel layer, the electrons are injected into the channel layer from the MC layer, so that higher electrical characteristics can be obtained. As a result, the electrical characteristics can be controlled by a simple change of the MC layer, and the logic circuits such as NOT, NAND, and NOR can be simply fabricated.